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 HSB285S
Silicon Schottky Barrier Diode for High frequency detection
REJ03G0010-0100Z Rev.1.00 Apr,16.2003
Features
* Low forward voltage, Low capacitance and High detection sensitivity. * HSB285S which is interconnected in series configuration. is designed for voltage doubler use. * CMPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSB285S Laser Mark S3 Package Code CMPAK
Pin Arrangement
3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2
2 1 (Top View)
Rev.1.00, Apr.16.2003, page 1 of 5
HSB285S
Absolute Maximum Ratings
(Ta = 25C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Note: 1. Per one device Symbol VR IO * Tj Tstg
1
Value 2 5 125 -55 to +125
Unit V mA C C
Electrical Characteristics *1
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Capacitance ESD-Capability *
2
Min -- -- -- 10
Typ -- -- 0.3 --
Max 0.15 0.27 -- --
Unit V
Test Condition IF = 0.1 mA IF = 1 mA VR = 1 V, f = 1 MHz C = 200 pF, RL = 0 , Both forward and reverse direction 1 pulse.
C --
pF V
Notes: 1. Per one device 2. Failure criterion ; IR 100 A at VR = 0.5 V
Rev.1.00, Apr.16.2003, page 2 of 5
HSB285S
Main Characteristic
10-2 10-2
Reverse current IR (A)
Forward current IF (A)
10-3
10-3
Ta = 75C
10-4
10-4
Ta = 25C
10-5
10-5
10-6
0
0.1
0.2
0.3
0.4
0.5
10-6
0
1
2
3
4
5
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Apr.16.2003, page 3 of 5
HSB285S
Package Dimensions
As of January, 2003
Unit: mm
2.0 0.2
0.1 0.3 + 0.05 -
(0.425)
0.16 - 0.06
+ 0.1
(0.425) 1.25 0.1
2.1 0.3
0 - 0.1
0.1 0.3 + 0.05 -
0.1 0.3 + 0.05 -
1.3 0.2
(0.2)
0.9 0.1
(0.65) (0.65)
Package Code JEDEC JEITA Mass (reference value)
CMPAK -- Conforms 0.006 g
Rev.1.00, Apr.16.2003, page 4 of 5
HSB285S
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corporation by various means, including the Renesas Technology Corporation Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein.
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Copyright (c) 2003. Renesas Technology Corporation, All rights reserved. Printed in Japan.
Colophon 0.0
Rev.1.00, Apr.16.2003, page 5 of 5


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